Si-Chen Lee (李嗣涔) was born in Taiwan, on August 13, 1952. He received the B.S. degree in electrical engineering from National Taiwan Universityin 1974 and Ph.D degree in electrical engineering from Stanford Universityin 1980 with a work consisting of experimental investigation of the AlGaAs/GaAs multi-heterojunction properties.
From 1980 to 1982, he worked at Energy Conversion Devices Inc. concerning the application of amorphous silicon hydrogen alloy to the solar cells. He joined the Department of Electrical Engineering, National Taiwan University in 1982 as a visiting associate professor, and is a professor now.
He served as the chairman of the Department from 1988 to 1992 and the Dean of academic affairs of National Taiwan University from 1996 to 2002. His current research interests are in the device applications and the growth kinetics of InGaAs/GaAs strained layer quantum dot device, InGaAs/InAs room temperature infrared light emitting diode and photodetector with applications to the pollution detection and biological reaction of cells. In addition, he is also interested in hydrogenated and deuterated amorphous and poly-silicon (carbon, germanium) hydrogen material and devices, such as thin film transistors and neural network image sensors. Since 1988, he pioneered a research work on the Chinese traditional qigong and somatic science which confirmed the existence of certain extraordinary ability of human body, such as character recognition by finger, psychokinesis. He also discovered the existence of information field (spiritual world) and proposed the “unification of mind and matter” to explain the phenomena.
Dr. Lee is an IEEE Fellow, member of the Chinese Institute of Electrical Engineering, he has received Dr. Sun Yat-San Academic award in 1987, five consecutive outstanding research awards of National Science Council from 1986 to 1996. He has been elected as a member of The Asia-Pacific Academy of Materials (APAM) in 1997, and received IEEE Third Millennium Medal for outstanding achievements and contributions in the area of Semiconductor Devices in 2000. In 2002, he was awarded the Medal of Electrical Engineering from the Association of Chinese Electrical Engineer.